search

AMReX-Microelectronics / FerroX

FerroX is a massively parallel, 3D phase-field simulation framework for modeling ferroelectric materials based scalable logic devices.
Other
9 stars 9 forks source link

Charge density in Source/Drain/Channel #25

Closed prkkumar closed 1 year ago

prkkumar commented 1 year ago

This PR adds the option to model the source, drain, and channel regions within the overall SC region by modifying the formula for charge density.

We now use the general form of rho as rho = q(p - n - N_a + N_d) where p is hole density n is electron density N_a and N_d are the concentration of ionized acceptor and donor, respectively.

In the current implementation, channel is assumed to have non zero acceptor doping (p-type) and source/drain have non-zero donor doping (n-type) [based on Girish's paper

jackieyao0114 commented 1 year ago

Not so relevant to this PR, but I think the following statement got reversed: n the current implementation, channel is assumed to have non zero acceptor doping (n-type) and source/drain have non-zero donor doping (p-type) p-type should be acceptor, n type is a donor.

jackieyao0114 commented 1 year ago

Is it possible to visualize the charge densities just like how you did it in the paper and quantify the doping effect?

prkkumar commented 1 year ago

Not so relevant to this PR, but I think the following statement got reversed: n the current implementation, channel is assumed to have non zero acceptor doping (n-type) and source/drain have non-zero donor doping (p-type) p-type should be acceptor, n type is a donor.

Thanks, yes that was a mistake. Fixed it in the first comment.