FrancoisBlomBrned
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1 month ago A1 : Prominent. A2 : If we didn't need to focus on myriad of FlipFlops, the SR and D types should be known at least for cs or ces majoring student. It was a pity Prof Yu didn't highlight these two types of F-F during the first LEC, nevertheless, I feel confident about it that we will figure out them later, maybe several weeks later when we accumulate more digital electro or IC(Integrated Circuits) knowledge. I wanna also take it into account the diff between Latch and Flip-flop. It is ubiquitously acknowledged that FF behaves more stable than Latch in many situations. Though they are implementation of two kinds of common memory technology, the main diff is how they react to changes of input (Voltages). On one hand, A Flip-flop prepares to change states merely under specific circumstances when its control signal goes from low to high or from high to low. On the other hand, a latch changes its output (Voltages) whenever its input (Voltages) change, regardless of the CONTROLLING SIGNAL. A3 : Excellent. I do not find any misunderstanding. A4 : Excellent. I truly agree with you and I feel a bit of overwhelmed to see such an answer with abundant external learning resources from other websites.(only one thing paid attention in the far future, generally wiki answers and solutions are not supposed to be appeared in the paragraphs of formal academic papers). But of course in this learning note it's quite okay. A4: Correct. A5: Correct. OA1: Partly True. Let us find more info of this question with more chapters covered as the learning process goes ahead. OA2: Okay. (Aber,) Despite Permanate Mass Storage you listed above, there're also RAMs/ROMs within which the data cannot be designed to keep the original state without external power (Voltage). Moreover, the Hi-Tech of Ddr exactly makes the sake of dynamic charging and releasing strategies, if I didn't mix up certain properties of the similar technologies.
To sum up, if I were required to mark your assignment for the few beginning LECs by Prof Tianli Yu in NTU, you would've gained score around 90.
A1: Generally speaking, there are two different "OR"s."XOR" is actually one of the them. The other "OR" means we can pick one of two things or both of them. "XOR", however, means that we can only pick one of the two things and we cannot choose both of them. So "XOR" can also be called as "Exclusive OR".
A2: "Flip-Flop" is a form or a pattern of circuit. Suppose we have 2 inputs in binary systems, that is 4 different kinds of inputs: (0, 0), (0, 1), (1, 0), (1, 1). Suppose we input (0, 1) first, the output should be "0"; when we input (0, 0), the output should remain the same, that is "0" too; then we input (1, 0), the output should change to "1"; finally, we input (1, 1), the output should be undefined or hard to conclude. That is to say: The circuit can be made to change state by signals applied to one or more control inputs and will output its state. (According to Wiki.) Flip-flops and latches are used as data storage elements to store a single bit (binary digit) of data; one of its two states represents a "one" and the other represents a "zero". Such data storage can be used for storage of state, and such a circuit is described as sequential logic in electronics. When used in a finite-state machine, the output and next state depend not only on its current input, but also on its current state (and hence, previous inputs). It can also be used for counting of pulses, and for synchronizing variably-timed input signals to some reference timing signal. (According to Wiki.)
A3: I do not think that Professor Yu has said many things about this in the first class so I asked Artificial Intellegence and it gives me the answer below: According to KIMI ai: DDR1, DDR3, and DDR5 are different generations of Dynamic Random-Access Memory (DRAM) technologies, each with significant differences in performance, power consumption, capacity, and functionality. Here are some of the main distinctions between them:
Data Transfer Rates: With each new generation, there is a notable increase in data transfer rates. DDR1 operates at 266-400MT/s, while DDR3 ranges from 800-1600MT/s. DDR5 further enhances this with starting speeds of 4800MT/s, and can scale up to higher speeds such as 5200MT/s and 5600MT/s, offering nearly double the bandwidth of DDR4.
Power Consumption: Newer generations of memory technology typically improve upon power efficiency. For instance, DDR3 significantly reduced power consumption compared to DDR2, and DDR5 also incorporates power efficiency designs, despite its higher speeds, through a more efficient architecture and lower voltage (1.1V compared to DDR3's 1.5V).
Memory Module Density: The density of individual memory chips increases with advancing technology. DDR5 memory modules can range from 8GB to 128GB in density, whereas DDR3 and DDR1 have relatively lower densities.
Architecture and Features: DDR5 introduces new architectural improvements, such as dual-channel architecture and higher efficiency, providing better performance and scalability. DDR5 also supports higher memory capacities and improved power management features.
In the field of RAM storage devices, one of the most common physical effects is ”electron tunneling“, which is used in NAND flash memory for data writing and erasing. Additionally, the ”ferroelectric effect“ plays a role in storage-class memory (SCM) technologies, such as those based on Ferroelectric Field Effect Transistors (FeFETs). These offer fast switching, high current ratios, bidirectional programmability, endurance, and retention, making them promising candidates for the next generation of non-volatile memories.
In summary, each generation of memory technology builds upon the previous one with significant improvements to meet increasing performance demands and efficiency requirements. DDR5 represents the cutting edge of current memory technology, providing unprecedented performance and efficiency. Hope it will help and thanks for giving me a chance to learn the knowledge about this question!
A4: I think it is actually about the concept called "random accessible". It is like you have to tell the computer which address you need it to go and take out the things preserved in it and this "address" is actully the "pointer" which points to the place the computer stores the data you want.
A5: I think the answer should be: 512 bytes 900 20000 2 5 == 9.216 * 10 ^ 10 bytes == 737.28 Gb
A6: For me, I think the capacity of a computer should be regarded as the velocity of reading and writing data into the storage system of the computer. The faster it reads/writes, the more capable the computer is.
A7: There are a lot of computer storage media:
Hope this can help you and let me know if I am wrong. I have only watched one class, so I am looking forward to your instruction and criticism. Thx!