Swap those 10K pull-downs from the gate of the MOSFETs (4 places) to the GPIO side of the 470 ohm resistors for slightly improved Rds(on). You've created a voltage divider, reducing the gate drive voltage from 3.3V to 3.152V. You get much the same protection at power-up without the loss of drive voltage.
Swap those 10K pull-downs from the gate of the MOSFETs (4 places) to the GPIO side of the 470 ohm resistors for slightly improved Rds(on). You've created a voltage divider, reducing the gate drive voltage from 3.3V to 3.152V. You get much the same protection at power-up without the loss of drive voltage.