despite the improvements made by improvements to Isat2 by @chetan201 in #64, there is still a systematic bias with temperature.
proposal
Other models have an additional temperature dependence on either band gap (DeSoto 5-parameter model) or ideality factor (PVSyst). IMHO I think that temperature dependence of band gap is makes sense because some materials have indirect band gaps which means that elevating carriers from the valence band to the conduction band is sensitive to temperature.
band gap temperature dependence
DeSoto 5-parameter model has coefficients for each device physics that can be used to estimate the effective temperature dependence of the band gap using this relation:
E_g = EgRef * (1 + dEgdT*(Tcell_K - Tref_K))
where coefficients EgRef and dEgdt are must be the same for fitting and predicting:
problem
despite the improvements made by improvements to
Isat2by @chetan201 in #64, there is still a systematic bias with temperature.proposal
Other models have an additional temperature dependence on either band gap (DeSoto 5-parameter model) or ideality factor (PVSyst). IMHO I think that temperature dependence of band gap is makes sense because some materials have indirect band gaps which means that elevating carriers from the valence band to the conduction band is sensitive to temperature.
band gap temperature dependence
DeSoto 5-parameter model has coefficients for each device physics that can be used to estimate the effective temperature dependence of the band gap using this relation:
where coefficients
EgRefanddEgdtare must be the same for fitting and predicting: