Introduce a "Dynamic Resistance" feature for semiconductors that calculates Rds_on and Rd dynamically based on current, junction temperature, and conduction loss data stored in a Lookup Table (LUT).
This option can be useful in scenarios where the voltage drop on the semiconductor is significant.
The case where a MOSFET with a diode is modeled must be carefully studied because both the resistance of the MOSFET and the diode need to be updated.
Introduce a "Dynamic Resistance" feature for semiconductors that calculates Rds_on and Rd dynamically based on current, junction temperature, and conduction loss data stored in a Lookup Table (LUT).
This option can be useful in scenarios where the voltage drop on the semiconductor is significant.
The case where a MOSFET with a diode is modeled must be carefully studied because both the resistance of the MOSFET and the diode need to be updated.