metal insulator semiconductor (mis) diodes calculation

[YutaroIshihama]

hello

I am interested in the calculation for metal insulator semiconductor (mis) diodes. This structure typically consists of Fe-MgO-GaAs. As long as I saw tutorial and example inputs, there is no inputs on the MIS structure. I think that the one for barrier-doped AlGaN-GaN heterostructure is close to my purpose. But, the doping method seems not to be delta-doping. In addition, one defines about the doped material, not about the doping material itself.

i would like to know how to do it. In other words, how to define material files for a metal and an insulator like Au, Fe, SiO2, MgO, Al2O3....? Once the definitions are completed, one can manage it by editing the example file on GaN hetero-structures, in my speculation.

thanks in advance for kind advice

[sblisesivdin]

Hello, thank you for your interest in Aestimo, and sorry for the late reply. You can define insulators like other materials inside the database.py file. It would be best if you found the values from the literature. For metals, you can highly dope a related material and try it.

If you define new materials to the database.py file, please send it as a pull request and help to develop our database. If you do not know how to pull request, you may mail me the file and I will change it on your behalf.

[h-hebal]

HI, You can define the metal/semiconductor contact in the structure layer under:

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surface=np.zeros(2) surface[0]= 0.0#left contact =ohmic contact [ev] surface[1]= 0.6 #right contact =Schottky barrier [ev]

check this article for values: Table 17.2. Literature values for Schottky barrier height and ideality obtained from current-voltage measurements: https://www.sciencedirect.com/topics/materials-science/schottky-diode Best regards