enkiller
commented
3 months ago 我在 STM32Gx 系列上也遇到类似问题。我是这样修改的，你可以参考一下
- 修改了
write_kv_hdr函数，在写入FDB_KV_PRE_WRITE标记之后，在整条数据的末尾，添加了一个标记
static fdb_err_t write_kv_hdr(fdb_kvdb_t db, uint32_t addr, kv_hdr_data_t kv_hdr, bool isfull)
{
fdb_err_t result = FDB_NO_ERR;
/* write the status will by write granularity */
result = _fdb_write_status((fdb_db_t)db, addr, kv_hdr->status_table, FDB_KV_STATUS_NUM, FDB_KV_PRE_WRITE, false);
if (result != FDB_NO_ERR) {
return result;
}
#if FDB_WRITE_GRAN > 1
if (isfull != true) {
/* Writes a end tag */
uint8_t endtag[(FDB_WRITE_GRAN + 7) / 8];
memset(endtag, FDB_BYTE_WRITTEN, sizeof(endtag));
result = _fdb_flash_write((fdb_db_t)db, addr + kv_hdr->len, endtag, sizeof(endtag), false);
if (result != FDB_NO_ERR) {
return result;
}
}
#endif
/* write other header data */
result = _fdb_flash_write((fdb_db_t)db, addr + KV_MAGIC_OFFSET, &kv_hdr->magic, sizeof(struct kv_hdr_data) - KV_MAGIC_OFFSET, false);
return result;
}- 修改
static fdb_err_t read_kv(fdb_kvdb_t db, fdb_kv_t kv)函数，如果一个错误的头且处于删除状态，就不输出错误信息
...
/* check CRC32 */
if (calc_crc32 != kv_hdr.crc32) {
uint32_t name_len = kv_hdr.name_len > FDB_KV_NAME_MAX ? FDB_KV_NAME_MAX : kv_hdr.name_len;
kv->crc_is_ok = false;
result = FDB_READ_ERR;
if (kv->status == FDB_KV_ERR_HDR) {
/* Incorrect KV has been removed. skip */
} else {
/* try read the KV name, maybe read name has error */
kv_name_addr = kv->addr.start + KV_HDR_DATA_SIZE;
_fdb_flash_read((fdb_db_t)db, kv_name_addr, (uint32_t *)kv->name, FDB_WG_ALIGN(name_len));
FDB_INFO("Error: Read the KV (%.*s@0x%08" PRIX32 ") CRC32 check failed!\n", name_len, kv->name, kv->addr.start);
}
} else {
...另外需要注意，STM32Gx 系列 Flash 带 ECC 特性，写入过程中掉电，概率出现 ECC 校验错误，访问错误的数据区域，将触发 NMI 中断
armink
您好！ 我之前在N32G452，STM32F407,STM32F103上面均移植过FDB,EASYFLASH，可正常用于产品开发，现在MCU换到了STM32G0B1RCT7，移植master分支的FDB，版本2.1.0，读取出现问题 问题描述： 测试fdb/samples下的demo代码，写入粒度配置为64时，CRC错误
修改写粒度为0，1，8，32均有其它写入错误
配置情况： 1.drv_flash_g0.c文件写粒度配置情况： const struct fal_flash_dev stm32_onchip_flash = { "onchip_flash", STM32_FLASH_START_ADRESS, STM32_FLASH_SIZE, FLASH_PAGE_SIZE, {NULL, fal_flash_read, fal_flash_write, fal_flash_erase},64}; 2.fdb_cfg.h文件写粒度配置情况：
define FDB_WRITE_GRAN 64
3.fal_cfg.h文件设备及分区配置情况： 只使用了内部BANK2的fdb_tsdb1,fdb_kvdb1进行测试 / flash device table /
define FAL_FLASH_DEV_TABLE \
{ \ &stm32_onchip_flash, \ } / ====================== Partition Configuration ========================== /
define FAL_PART_HAS_TABLE_CFG
ifdef FAL_PART_HAS_TABLE_CFG
/ partition table /
define FAL_PART_TABLE \
{ \ {FAL_PART_MAGIC_WORD, "app", "onchip_flash", 01024, 1201024, 0}, \ {FAL_PART_MAGIC_WORD, "etc", "onchip_flash", 120x1024, 8x1024, 0}, \ {FAL_PART_MAGIC_WORD, "param", "onchip_flash", 128x1024, 8x1024, 0}, \ {FAL_PART_MAGIC_WORD, "fdb_tsdb1", "onchip_flash", 136x1024, 8x1024, 0}, \ {FAL_PART_MAGIC_WORD, "fdb_kvdb1", "onchip_flash", 144x1024, 16x1024, 0}, \ } FLASH驱动验证情况： STM32G0B1RCT7的内部FLASH驱动移植的RTT的drv_flash_g0.c的代码，测试过双BANK（BANK1/BANK2均为128KB）读、写、擦除均正常。