I normally associate EEPROM with 1-10K write cycles and flash with 50-100K. The quoted section in this forum post seems to indicate 50K cycles:
Data Retention of Atmel's dataflash devices is a minimum of 10 years.
Endurance in DataFlash is specified as the number of writes (erase/program
cycles) performed on a page before a bit in that page will fail to read
correctly. For the 0.25um DataFlash family (the parts which are
currently in production ), the endurance is typically 50,000 cycles.
Higher endurance values can be achieved by incorporating error detection and
correction, (ECC), since endurance failures tend to be of a single bit and
random nature. All DataFlash products provide additional bytes within each
page in the memory array. These additional bytes can be used to help perform
the ECC function. The 1Meg through 8Meg densities have 8 additional bytes
per page, the 16Meg and 32Meg have 16 additional bytes per page whilst the 64
Megabit has an additional 32 bytes for each page.
I normally associate EEPROM with 1-10K write cycles and flash with 50-100K. The quoted section in this forum post seems to indicate 50K cycles: