Vserial_hi parameter missing

[belaa]

The bf.cfg files in /data set the voltage parameters according to:

Vbb = -60.0         # Back bias
Vparallel_lo = -8.0     # Parallel Low Voltage
Vparallel_hi = 4.0      # Parallel High Voltage
Vserial_lo = -4.0       # Serial Low Voltage
Vserial_lo = 6.0        # Serial High Voltage 

Vserial_lo corresponds to both serial low/high voltage. However in multigrid.cpp it seems that Vserial_hi is never actually called:

Vbb = GetDoubleParam(inname, "Vbb", -50.0);             // Back bias
  Vparallel_lo = GetDoubleParam(inname, "Vparallel_lo", -8.0);  // Parallel Low Voltage
  Vparallel_hi = GetDoubleParam(inname, "Vparallel_hi", 4.0);   // Parallel High Voltage
  Vserial_lo = GetDoubleParam(inname, "Vserial_lo", -6.0);  // Serial Low Voltage
  Vaverage = (8.0 * Vparallel_lo + 4.0 * Vparallel_hi) / 12.0;

[dkirkby]

I just checked that all the .cfg files under data/ have this issue. Even though Vserial_hi is never used by the code, it looks like the value of Vserial_lo is being overwritten with the wrong value (6V instead of -4V).

Another minor issue I noticed in the .cfg files is that most of the concentrations are specified with units of cm^-2 in their comments (all except BackgroundDoping). Shouldn't that be cm^-3 throughout?

[craiglagegit]

Dave,

Thanks for pointing these things out, and sorry it has taken me so long to reply. I made the following changes:

(1) I removed the -lsz from the Makefile as you suggested.

(2) I corrected the Vserial_lo in the .cfg file to read Vserial_hi

The cm^-2 and cm^-3 differences are correct as they are. The BackgroundDoping is a volume charge density throughout the silicon and has units of cm^-3. The ChannelDoping and ChannelStopDoping are implants introduced from the frontside of the silicon, and so they have units of cm^-2. The volume charge density in the channel and channel stop regions in units of cm^-3 are then a function of the depth of the implants, controlled by the ChannelDepth and ChannelStopDepth parameters. So, for example, if I have ChannelDoping=1.0E12, and a square profile (ChannelProfile=0) with a ChannelDepth = 1.0 microns, the volume charge density in that region will be 1.0E12 cm^-2 / 1.0E-4 cm = 1.0E16 cm^-3. The program should (hopefully) calculate all of this correctly. This is common usage in semiconductors.

These volume charge densities in cm^-3 are plotted in the "*_1D_Potentials.pdf" plots, although the units are somewhat cryptic.

Please let me know if you have more questions or concerns.

Thanks,

Craig

---

From: dkirkby notifications@github.com Sent: Thursday, April 28, 2016 8:54:52 AM To: craiglagegit/Poisson_CCD22 Subject: Re: [craiglagegit/Poisson_CCD22] Vserial_hi parameter missing (#1)

I just checked that all the .cfg files under data/ have this issue. Even though Vserial_hi is never used by the code, it looks like the value of Vserial_lo is being overwritten with the wrong value (6V instead of -4V).

Another minor issue I noticed in the .cfg files is that most of the concentrations are specified with units of cm^-2 in their comments (all except BackgroundDoping). Shouldn't that be cm^-3 throughout?

You are receiving this because you are subscribed to this thread. Reply to this email directly or view it on GitHubhttps://github.com/craiglagegit/Poisson_CCD22/issues/1#issuecomment-215475401

[dkirkby]

Thanks for the clarification and updates. I was thrown off by how similar the values were, all around 1e12, and so assumed the units must the same.

[craiglagegit]

I understand. It's kind of a coincidence that the values are so similar.

[craiglagegit]

I'm closing this issue. I anyone disagrees, please holler.