Open thienbinh92 opened 8 months ago
I have never heard of carrier concentrations that low before. For GaAs you typically see concentrations from 1e13 and above.
Could there be a mistake with your units? The concentration should be in cm^-3.
I thought about a low doping concentration because if I set the doping concentration of -3e13, the obtained average electronic conductivity is very much higher compared with the experimental one (1e-6 to 1e-8 /ohm cm). I got information from GaAs: "Intrinsic Carrier Concentration | 1.79 x 106 cm-3". I also found a higher doping concentration in another document (1e13~1e14), but don't know the reasonable one. Maybe a range of doping concentrations is needed. Is the accuracy of electronic conductivity reasonable?
Average conductivity (σ), Seebeck (S) and mobility (μ) results:
conc [cm-3] temp [K] σ [S/m] S [µV/K] μ [cm2/Vs]
------------- ---------- --------- ---------- ------------
-3.00e+13 201.0 1.72e+01 -8.56e+02 35825.3
-3.00e+13 290.0 7.78e+00 -9.11e+02 16187.2
-3.00e+13 401.0 4.18e+00 -9.67e+02 8705.5
-3.00e+13 506.0 2.81e+00 -1.01e+03 5836.5
-3.00e+13 605.0 2.81e+00 -9.84e+02 4387.0
-3.00e+13 789.0 3.10e+01 -7.11e+02 2906.5
-3.00e+13 994.0 2.40e+02 -5.45e+02 1989.5
I tried GaAs example. I found that the experiment's intrinsic carrier concentration is just 1.7e6. But if I reduce the doping concentration to 1.7e6, the following error appears. Is the method not suitable for low doping content or semiconductors?