hackingmaterials / amset

Electronic transport properties from first-principles calculations
https://hackingmaterials.lbl.gov/amset/
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"amset run nworkers 40" and "amset eff-mass vasprun.xml" ERROR #909

Open Li-HX580 opened 1 month ago

Li-HX580 commented 1 month ago

When i run "amset run nworkers 40",Display error as "No such file or directory: 'settings.yaml'" And When i run "amset eff-mass vasprun.xml" to calculate the effective mass of a small two-dimensional material,it has no problem.But when i use it to calculate a vertically arranged two-dimensional heterojunction,it always killed when calculating to 85%.I am a novice player in code, so I don't know how to solve them.

Li-HX580 commented 1 month ago

(amset) [root@hzwhpc band]# amset eff-mass vasprun.xml

             █████╗ ███╗   ███╗███████╗███████╗████████╗
            ██╔══██╗████╗ ████║██╔════╝██╔════╝╚══██╔══╝
            ███████║██╔████╔██║███████╗█████╗     ██║
            ██╔══██║██║╚██╔╝██║╚════██║██╔══╝     ██║
            ██║  ██║██║ ╚═╝ ██║███████║███████╗   ██║
            ╚═╝  ╚═╝╚═╝     ╚═╝╚══════╝╚══════╝   ╚═╝

                                                v0.4.22

  Ganose, A. M., Park, J., Faghaninia, A., Woods-Robinson,
  R., Persson, K. A., Jain, A. Efficient calculation of
  carrier scattering rates from first principles.
  Nat. Commun. 12, 2222 (2021)

amset starting on 11 Sep 2024 at 19:18



  Run parameters:
    ├── scattering_type: ['CRT']
    ├── doping: [-1.e+15  1.e+15]
    ├── temperatures: [300]
    ├── soc: True
    ├── zero_weighted_kpoints: prefer
    ├── interpolation_factor: 10
    ├── wavefunction_coefficients: wavefunction.h5
    ├── use_projections: False
    ├── unity_overlap: True
    ├── free_carrier_screening: False
    ├── defect_charge: 1
    ├── compensation_factor: 2
    ├── constant_relaxation_time: 1e-14
    ├── energy_cutoff: 1.5
    ├── fd_tol: 0.05
    ├── dos_estep: 0.01
    ├── symprec: 0.01
    ├── nworkers: -1
    ├── cache_wavefunction: True
    ├── calculate_mobility: False
    ├── separate_mobility: False
    ├── mobility_rates_only: False
    ├── write_input: False
    ├── write_mesh: False
    ├── print_log: True
    └── write_log: False

  ~~~~~~~~~~~~~~~~~~~~~~~~~~~~ STRUCTURE ~~~~~~~~~~~~~~~~~~~~~~~~~~~~

  Structure information:
    ├── formula: MoSnCTe₂
    ├── # sites: 5
    └── space group: Cm

  Lattice:
    ├── a, b, c [Å]: 3.56, 3.56, 29.26
    └── α, β, γ [°]: 90, 90, 120

  ~~~~~~~~~~~~~~~~~~~~~~~~~~ BAND STRUCTURE ~~~~~~~~~~~~~~~~~~~~~~~~~

  Input band structure information:
    ├── # bands: 128
    ├── # k-points: 60
    ├── Fermi level: -0.042 eV
    ├── spin polarized: False
    └── metallic: False

  Band gap:
    ├── direct band gap: 0.826 eV
    └── direct k-point: [0.33, 0.33, 0.00]

  Valence band maximum:
    ├── energy: -0.461 eV
    ├── k-point: [0.33, 0.33, 0.00]
    └── band indices: 44

  Conduction band minimum:
    ├── energy: 0.366 eV
    ├── k-point: [0.33, 0.33, 0.00]
    └── band indices: 45

  ~~~~~~~~~~~~~~~~~~~~~~~~~~ INTERPOLATION ~~~~~~~~~~~~~~~~~~~~~~~~~~

  Getting band interpolation coefficients
    └── time: 0.4844 s

  Interpolation parameters:
    ├── k-point mesh: 29x29x3
    └── energy cutoff: 1.5 eV

  Interpolating spin-up bands 33-50
    └── time: 0.5319 s

  Generating tetrahedron mesh vertices
    └── time: 0.0453 s

  Initializing tetrahedron band structure
    └── time: 0.6936 s

  Initializing momentum relaxation time factor calculator

  ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ DOS ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

  DOS parameters:
    ├── emin: -6075.53 eV
    ├── emax: 6917.41 eV
    ├── dos weight: 1
    └── n points: 1299294

  Generating tetrahedral DOS:
    ├── DOS:        85%|██████████████████████▉    | 1:37:13<20:04:48Killed