Open Samarthjainabout opened 1 year ago
It should be fine for discharge FETs since VDS can sustain larger voltages. The wordline select FETs on the other hand are probably vulnerable. I included a 3.3V alternative in the last version I submitted. You may want to switch to that repo going forward since it contains the latest changes.
Also what i see is M1 vdata vclamp bl gnd sky130_fd_pr__nfet_01v8 L=0.15 W=1.44 nf=4 In this sensing circuit part, you have used 1.8um model ( sky130_fd_pr__nfet_01v8 ) of fet but the gate length is changed to lowest possible value. Is that ok to do by foundry? I am concerned that the model might not predict the correct value in this way in simulations and how to decide the vds max voltage?
As the set/reset/forming voltages range higher than 1.8v VDS, is it safe to use 1.8vLVT for wordine select fets and discharge fets for rows/col?