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[neemo14-15]

Reliability of reverse properties of power semiconductor devices:: Influence of surface dielectric layer and its experimental verification V. Papež, B. Kojecký, D. Šámalless V. Papež, B. Kojecký, D. Šámal Reliability of reverse properties of power semiconductor devices:: Influence of surface dielectric layer and its experimental verification Microelectronics Journal, Volume 39, Issue 6, June 2008, Pages 851–856 Original Research Article Abstract Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual standard tests do not reveal total information concerning the technological genetic aspects of devices production.

[neemo14-15]

Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations B. Heinze, J. Lutz, H.P. Felsl, H.-J. Schulzeless B. Heinze, J. Lutz, H.P. Felsl, H.-J. Schulze Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations Microelectronics Journal, Volume 39, Issue 6, June 2008, Pages 868–877 Original Research Article Abstract Buffer structures and edge termination have a decisive influence on the static and dynamic characteristics of free-wheeling diodes. In this paper the influence of buffer structures at the cathode side, the influence of the design of the edge termination and of a resistive zone at the anode side are analysed with respect to the ruggedness of free-wheeling diodes. Therefore, we investigated the device behaviour by means of numerical device simulation concerning the formation of current filamentation and the correlated shape of the electrical field distribution.

[neemo14-15]

Non-uniform distribution of carrier lifetime over the area of power bipolar semiconductor devices results in a non-uniform distribution of on-state current density and switching loses. Consequently, it results in non-uniform temperature distribution which can negatively influence the device reliability. Several methods can be used for measuring carrier lifetime distribution both in starting single crystal material and in device structures after high-temperature processes. Advantages and disadvantages of individual methods and an optimum area of applications are discussed in this paper. This paper is mostly oriented on a possibility to use LBIC method for measuring carrier lifetime distribution in the bulk of high voltage large-area devices, especially N+NPP+ diode structures. Article Outline

1. Introduction
2. Measuring methods
3. Monitoring carrier lifetime distribution in power diode structures using LBIC method
4. Results and discussion
5. Experimental results and discussion

[neemo14-15]

The transient behavior of current density distributions in the nitride of MNOS devices subjected to constant current stress has been studied via numerical calculation and on the basis of Arnett's trapping model. We have found that under low injection conditions the current distributions can be well described by two parameters which have an easy physical interpretation and the time evolution of which is directly related to the characteristics of the capture centers. A new method to obtain the trapping parameters, based on the measure of the transient of current at the anode of samples with different nitride thickness, is proposed.

[neemo14-15]

The two-dimensional thermal oxidation of silicon at moderate furnace temperatures has been modelled using a boundary element based algorithm, and an efficient computer code has been developed that provides a good representation of this complex moving boundary problem. The model is applied here to the optimisation of the sidewall masked isolation process, a technique that reduces the intrusion of the oxide beneath the nitride masking film and improves the packing density of the integrated circuits on the silicon wafer.

[neemo14-15]

The implantation dose and the anneal temperature are two crucial parameters in the formation mechanism of silicon-on-insulator by oxygen-ion-implantation, SIMOX. The effects of these parameters on the multilayer structure of SIMOX have been nondestructively evaluated using spectroscopic and multiple-angle ellipsometry. These observations show strong correlation with data obtained by selective etching and single-mode ellipsometry. Electrical results are reported on the activation of oxygen-induced thermal donors and new donors.

[neemo14-15]

We developed a series of algorithms, based on the string model, that simulate the inhomogeneous etching process of polymeric materials, which exhibit swelling during dissolution by an organic solvent, used in IC process fabrication. The swelling creates a gel layer between the solid (polymer) and the liquid (solvent) phases. Usually, simulations based on the string development model assume an abrupt solid-liquid interface. Our algorithms are capable of simulating two interrelated etch fronts, and may easily be extended to simulate n interrelated etch fronts. The speed with which the points of the gel-solid boundary advance depends on the distance of each point from the gel-liquid boundary. Considering the two boundaries as plane curves, one must deal with the problem of what we define as the “distance” of every point of the first curve from the second. The algorithm developed can deal with any pair of non-intersecting curves in two dimensions. Two pairs of curves were used to test the algorithm: the first with curves of a simple form, and the second with curves of a complicated form. Next we simulated the development process of an e-beam resist that exhibits swelling.

[neemo14-15]

http://www.sciencedirect.com/science/activateaccess

[neemo14-15]

http://info.sciencedirect.com/sciencedirect/using/access_article_display/guest

[neemo14-15]

https://www.sciencedirect.com/science?_ob=RegistrationURL&_method=display&_type=guest&_returnURL=http%3A%2F%2Fwww.sciencedirect.com%2Fscience%2Flogin&_acct=C000228598&_version=1&_userid=10&md5=7a418779018b97e81107a337f97128c0

[neemo14-15]

http://www.sciencedirect.com/science/book/9780408707787

[longkai]

trash, close it.