STM32F103 ee_format clears 0'th page

[remrol]

On STM32F1 architecture _EE_PAGE_OR_SECTOR is PAGE, then ee_format instruction: flashErase.PageAddress = _EE_USE_FLASH_PAGE_OR_SECTOR; wrongly assigns page number instead of page address and leads to clearing 0'th bank. Corrected line should be: flashErase.PageAddress = _EE_ADDR_INUSE;

[nimaltd]

do you check it? I think I checked before and it works fine.... I can not remember now

[remrol]

Yes this is the problem which I found just now on STM32F103CBT6 using STM32CubeIDE Version: 1.10.1 HAL 1.8.4 Original code overwrites first FLASH page and the MCU stops working, need to re-program MCU. After modification everything works fine. Of course it will be great if someone check this issue.

EDIT: from stm32f1xx_hal_flash_ex.h, see PageAddress desription, it clearly says it should be FLASH address

/**

• @brief FLASH Erase structure definition / typedef struct { uint32_t TypeErase; /!< TypeErase: Mass erase or page erase. This parameter can be a value of @ref FLASHEx_Type_Erase */

  uint32_t Banks; /!< Select banks to erase when Mass erase is enabled. This parameter must be a value of @ref FLASHEx_Banks /

  uint32_t PageAddress; /!< PageAdress: Initial FLASH page address to erase when mass erase is disabled This parameter must be a number between Min_Data = 0x08000000 and Max_Data = FLASH_BANKx_END (x = 1 or 2 depending on devices)/

  uint32_t NbPages; /!< NbPages: Number of pagess to be erased. This parameter must be a value between Min_Data = 1 and Max_Data = (max number of pages - value of initial page)/

} FLASH_EraseInitTypeDef;

[nimaltd]

thanks for reporting..

[nimaltd]

please check again. I fixed it

[remrol]

Works fine thank you, can be closed