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vaughnbetz / COFFE

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About [R, C] in the metal layer #53

Open luck-codeer opened 1 year ago

luck-codeer commented 1 year ago

I would also like to ask you a question about how to obtain the resistance and capacitance values per unit length in this metal layer. If I want to obtain a value around -200 ℃, do you have any good suggestions. image

vaughnbetz commented 1 year ago

I'm not sure. You could look up the resistivity behaviour of copper with temperature, which will give some idea, but since there are also barrier layers taking some of the metal area this will not be perfectly accurate. You could check a process technology like ASAP7 to see if it has temperature dependence of metal included.

luck-codeer commented 1 year ago

Ok, thank you Professor Betz, I checked the resistivity of copper at low temperature before, but I would like to ask if the capacitance per unit length in the metal layer needs to be modified at different temperatures. Also, could you take a look at my last question(https://github.com/vaughnbetz/COFFE/issues/52), because Straix10's architecture is very important in COFFE and VTR.

vaughnbetz commented 1 year ago

Metal capacitance shouldn't vary significantly (or at all) with temperature. The basic R you get from a process technology is presumably at 85 C or 100 C if not specified; 200 C will drive the resistivity up some.

Vaughn

On Tue, Jul 25, 2023 at 11:06 AM luck-codeer @.***> wrote:

Ok, thank you Professor Betz, I checked the resistivity of copper at low temperature before, but I want to ask if the capacitance per unit length needs to be modified at different temperatures. Also, can you take a look at my last question(#52 https://github.com/vaughnbetz/COFFE/issues/52), because Straix10's architecture is very important in COFFE and VTR.

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luck-codeer commented 1 year ago

okay, thank you, Professor Betz. I understand

StephenMoreOSU commented 5 months ago

You should also set the temperature in HSPICE to make sure the active elements (transistors) are using the same temperature you expect to be simulating. The ".TEMP X" directive can be used for this. I'm not sure if setting the temperature in HSPICE also does some conversion to passive elements but this thread seems to have more information about it.

To my knowledge transistors will be significantly affected by changes in temperature.